000 04240nam a22004577a 4500
003 OSt
005 20231128145417.0
008 231128b |||||||| |||| 00| 0 eng d
020 _a9783319668604
040 _aDL
_cCUS
072 7 _2bisacsh
082 0 4 _a537.622
_223
_bHAM/B
100 1 _aHamaguchi, Chihiro,
_eAuthor.
_924403
245 1 0 _aBasic Semiconductor Physics
250 _a3rd ed. 2017.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2017.
300 _aXXI, 709 p :
_b315 illustrations)
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aGraduate Texts in Physics,
_x1868-4513
505 0 _aPreface to the Third Edition -- Energy Band Structures of Semiconductors -- Cyclotron Resonance and Energy Band Structures -- Wannier Function and Effective Mass Approximation -- Optical Properties 1 -- Optical Properties 2 -- Electron-Phonon Interaction and Electron Transport -- Magnetotransport Phenomena -- Quantum Structures -- Light Emission and Laser.
520 _aThis book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue lasers, optical confinement, laser modes, and strained quantum well lasers, offering insights into the physics of various kinds of semiconductor lasers. In this third edition, energy band calculations in full band zone with spin-orbit interaction are presented, showing all the matrix elements and equipping the reader to prepare computer programs of energy band calculations. The Luttinger Hamiltonian is discussed and used to analyze the valence band structure. Numerical calculations of scattering rate, relaxation time, and mobility are presented for typical semiconductors, which are very helpful for understanding of transport. Nitrides such as GaN, InN, AlN and their ternary alloys are very important materials for the blue light emission, and high power devic es with and high frequency.
588 _aDescription based on publisher-supplied MARC data.
650 0 _aElectronic materials.
_924404
650 0 _aElectronics.
650 0 _aMaterials science.
_924405
650 0 _aMicroelectronics.
_924406
650 0 _aOptical materials.
_924407
650 0 _aSemiconductors.
_911410
650 1 4 _aSemiconductors.
_0https://scigraph.springernature.com/ontologies/product-market-codes/P25150
_911410
650 2 4 _aCharacterization and Evaluation of Materials.
_0https://scigraph.springernature.com/ontologies/product-market-codes/Z17000
_924408
650 2 4 _aElectronics and Microelectronics, Instrumentation.
_0https://scigraph.springernature.com/ontologies/product-market-codes/T24027
_924409
650 2 4 _aOptical and Electronic Materials.
_0https://scigraph.springernature.com/ontologies/product-market-codes/Z12000
_924410
776 0 8 _iPrint version:
_tBasic semiconductor physics.
_z9783319668598
_w(DLC) 2017951190
776 0 8 _iPrinted edition:
_z9783319668598
776 0 8 _iPrinted edition:
_z9783319668611
776 0 8 _iPrinted edition:
_z9783319883298
942 _2ddc
_cWB16
999 _c214338
_d214338