| 000 | 01362cam a22003014a 4500 | ||
|---|---|---|---|
| 999 |
_c164204 _d164204 |
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| 020 | _a0306474972 | ||
| 040 | _cCUS | ||
| 082 | 0 | 0 |
_a530.44 _bCHE/L |
| 100 | 1 | _aChen, Francis F., | |
| 245 | 1 | 0 |
_aLecture notes on principles of plasma processing/ _cFrancis F. Chen and Jane P. Chang. |
| 246 | 3 | 0 | _aPrinciples of plasma processing |
| 260 |
_aNew York : _bKluwer Academic/Plenum Publishers, _c2003. |
||
| 300 |
_aix, 208 p. : _bill. ; _c28 cm. |
||
| 505 | _aPart A1: Introduction to Plasma Science. I. What is plasma? II.Plasma fundamentals. Part A2: Introduction to Gas Discharges. III. Gas discharge fundamentals. Part A3: Plasma Sources I. IV. Introduction to plasma sources. Part A4: Plasma Sources II. V. RIE discharges. Plasma Chemistry. Part A5: Plasma Sources III. VI. ECR sources. Part A6: Plasma Sources IV. VIII. Helicon wave sources and HDPs. IX. Discharge equilibrium. Part A7: Plasma Diagnostics. X. Introduction. XI. Remote diagnostics. Langmuir probes. XIII. Other local diagnostics. Part B1: Overview of Plasma Processing in Microelectronics Fabrication. I. Plasma processing. II. Applications in microelectronics. Part B2: Kinetic Theory and Collisions. I. Kinetic theory. II. Practical gas kinetic models and macroscopic properties. III. Collision dynamics. Part B3: Atomic Collisions and Spectra. I. Atomic energy levels. II. Atomic collisions. IV. Inelastic collisions. Part B4: Molecular Collisions and Spectra. I. Molecular energy levels. II. Selection rule for optimal emission of molecules. IV Heavy particle collisions. V. Gas phase kinetics. Part B5: Plasma Diagnostics. I. Optical emission spectography. II. Laser induced fluorescence. III. Laser Interferometry. IV. Full-wafer interferometry. V. Mass spectrometry. Part B6: Plasma Surface Kinetics. I. Plasma chemistry. II. Surface reactions. III. Loading. IV. Selectivity. V. Detailed reaction modeling. Part B7: Feature Evolution and Modeling. I. Fundamentals of feature evolution in plasma etching. II. Predictive modeling. III. Mechanisms of profile evolution. IV. Profile simulation. V. Plasma damage. Epilogue: Current Problems in Semiconductor Processing. I. Front-end challenges. II. Back-end challenges. III. Patterning nanometer features. IV. Deep reactive etch for MEMS. V. Plasma-induced damage. VI. Species control in plasma reactors. | ||
| 650 | 0 | _aPlasma engineering. | |
| 650 | 0 | _aPlasma chemistry. | |
| 650 | 0 | _aPlasma dynamics. | |
| 700 | 1 | _aChang, Jane P., | |
| 942 | _cSC79 | ||