000 | 01505nam a2200205Ia 4500 | ||
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020 | _a9788120330207 | ||
040 | _cCUS | ||
082 |
_a621.38152 _bSTR/S |
||
100 |
_aStreetman, Ben G. _911409 |
||
245 | 0 |
_aSolid state electronic devices/ _cBen G. Streetman and Sanjay Kumar Banerjee. |
|
250 | _a6th ed. | ||
260 |
_aNew Delhi: _bPrentice, _c2005. |
||
300 |
_axviii, 581 p. : _bill. ; _c25 cm. |
||
440 |
_aPrentice Hall series in solid state physical electronics. _911413 |
||
505 | _a1. Crystal properties and growth of semiconductors -- 2. Atoms and electrons -- 3. Energy bands and charge carriers in semiconductors -- 4. Excess carriers in semiconductors -- 5. Junctions -- 6. Field-effect transistors -- 7. Bipolar junction transistors -- 8. Optoelectronic devices -- 9. Integrated circuits -- 10. High-frequency and high-power devices -- App. Physical constants and conversion factors -- App. Properties of semiconductor materials -- App. Derivation of the density of states in the conduction band -- App. Derivation of Fermi-Dirac statistics -- App. Dry and wet thermal oxide thickness grown on Si (100) as a function of time and temperature -- App. Solid solubilities of impurities in Si -- App. Diffusivities of dopants in Si and SiO[subscript 2] -- App. Projected range and straggle as function of implant energy in Si. | ||
650 |
_aSemiconductors _911410 |
||
650 |
_aSolid state electronics _911414 |
||
700 |
_aBanerjee, Sanjay Kumar. _911408 |
||
942 | _cWB16 | ||
999 |
_c151207 _d151207 |