Physics of semiconductor devices/ (Record no. 151277)
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| 000 -LEADER | |
|---|---|
| fixed length control field | 00364nam a2200145Ia 4500 |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 8126517026 |
| 040 ## - CATALOGING SOURCE | |
| Transcribing agency | CUS |
| 082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 537.6221 |
| Item number | SZE/P |
| 100 ## - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Sze, Simon M. |
| 245 #0 - TITLE STATEMENT | |
| Title | Physics of semiconductor devices/ |
| Statement of responsibility, etc. | Simon M. Sze, Kwok K. Ng. |
| 250 ## - EDITION STATEMENT | |
| Edition statement | 3rd ed. |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT) | |
| Place of publication, distribution, etc. | New Delhi: |
| Name of publisher, distributor, etc. | Wiley-India, |
| Date of publication, distribution, etc. | 2008. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | x, 815 p. : |
| Other physical details | ill. ; |
| Dimensions | 23 cm. |
| 505 ## - FORMATTED CONTENTS NOTE | |
| Formatted contents note | Introduction. Part I Semiconductor Physics. Chapter 1 Physics and Properties of Semiconductors-A Review. 1.1 Introduction. 1.2 Crystal Structure. 1.3 Energy Bands and Energy Gap. 1.4 Carrier Concentration at Thermal Equilibrium. 1.5 Carrier-Transport Phenomena. 1.6 Phonon, Optical, and Thermal Properties. 1.7 Heterojunctions and Nanostructures. 1.8 Basic Equations and Examples. Part II Device Building Blocks. Chapter 2 p-n Junctions. 2.1 Introduction. 2.2 Depletion Region. 2.3 Current-Voltage Characteristics. 2.4 Junction Breakdown. 2.5 Transient Behavior and Noise. 2.6 Terminal Functions. 2.7 Heterojunctions. Chapter 3 Metal-Semiconductor Contacts. 3.1 Introduction. 3.2 Formation of Barrier. 3.3 Current Transport Processes. 3.4 Measurement of Barrier Height. 3.5 Device Structures. 3.6 Ohmic Contact. Chapter 4 Metal-Insulator-Semiconductor Capacitors. 4.1 Introduction. 4.2 Ideal MIS Capacitor. 4.3 Silicon MOS Capacitor. Part III Transistors. Chapter 5 Bipolar Transistors. 5.1 Introduction. 5.2 Static Characteristics. 5.3 Microwave Characteristics. 5.4 Related Device Structures. 5.5 Heterojunction Bipolar Transistor. Chapter 6 MOSFETs. 6.1 Introduction. 6.2 Basic Device Characteristics. 6.3 Nonuniform Doping and Buried-Channel Device. 6.4 Device Scaling and Short-Channel Effects. 6.5 MOSFET Structures. 6.6 Circuit Applications. 6.7 Nonvolatile Memory Devices. 6.8 Single-Electron Transistor. Chapter 7 JFETs, MESFETs, and MODFETs. 7.1 Introduction. 7.2 JFET and MESFET. 7.3 MODFET. Part IV Negative-Resistance and Power Devices. Chapter 8 Tunnel Devices. 8.1 Introduction. 8.2 Tunnel Diode. 8.3 Related Tunnel Devices. 8.4 Resonant-Tunneling Diode. Chapter 9 IMPATT Diodes. 9.1 Introduction. 9.2 Static Characteristics. 9.3 Dynamic Characteristics. 9.4 Power and Efficiency. 9.5 Noise Behavior. 9.6 Device Design and Performance. 9.7 BARITT Diode. 9.8 TUNNETT Diode. Chapter 10 Transferred-Electron and Real-Space-Transfer Devices. 10.1 Introduction. 10.2 Transferred-Electron Device. 10.3 Real-Space-Transfer Devices. Chapter 11 Thyristors and Power Devices. 11.1 Introduction. 11.2 Thyristor Characteristics. 1 1.3 Thyristor Variations. 11.4 Other Power Devices. Part V Photonic Devices and Sensors. Chapter 12 LEDs and Lasers. 12.1 Introduction. 12.2 Radiative Transitions. 12.3 Light-Emitting Diode (LED). 12.4 Laser Physics. 12.5 Laser Operating Characteristics. 12.6 Specialty Lasers. Chapter 13 Photodetectors and Solar Cells. 13.1 Introduction. 13.2 Photoconductor. 13.3 Photodiodes. 13.4 Avalanche Photodiode. 13.5 Phototransistor. 13.6 Charge-Coupled Device (CCD). 13.7 Metal-Semiconductor-Metal Photodetector. 13.8 Quantum-Well Infrared Photodetector. 13.9 Solar Cell. Chapter 14 Sensors. 14.1 Introduction. 14.2 Thermal Sensors. 14.3 Mechanical Sensors. 14.4 Magnetic Sensors. 14.5 Chemical Sensors. Appendixes. A. List of Symbols. B. International System of Units. C. Unit Prefixes. D. Greek Alphabet. E. Physical Constants. F. Properties of Important Semiconductors. G. Properties of Si and GaAs. H. Properties of SiO, and Si3N. Index. |
| 650 ## - SUBJECT | |
| Keyword | Semiconductors |
| 700 ## - ADDED ENTRY--PERSONAL NAME | |
| Personal name | Ng, Kwok K. |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) | |
| Koha item type | General Books Science Library |
| Withdrawn status | Lost status | Damaged status | Not for loan | Home library | Current library | Shelving location | Date acquired | Full call number | Accession number | Date last seen | Koha item type | Public note |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Science Library, Sikkim University | Science Library, Sikkim University | Science Library General Section | 28/08/2016 | 537.6221 SZE/P | P05950 | 16/01/2020 | General Books Science Library | Books For SU Science Library |